Characterisation of analogue front end and time walk in CMOS active pixel sensor
نویسندگان
چکیده
In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were before and after neutron irradiation 5e14 neq/cm2. Threshold, noise calibration of the analogue front end determined external A spatially sensitive measurement collected was carried out Edge-TCT, showing uniform collection output delay centre. On edges sharing observed due finite beam width resulting smaller signals larger delay. Time below 25 ns for above 2000 electrons at threshold level. injection yielded identical results.
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ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2021
ISSN: ['1748-0221']
DOI: https://doi.org/10.1088/1748-0221/16/12/p12020